?1 cxk5v81000atm -85llx/10llx e95715-st 131072-word 8-bit high speed cmos static ram description the cxk5v81000atm is a high speed cmos static ram organized as 131072-words by 8-bits. a polysilicon tft cell technology realized extremely low stand-by current and higher data retention stability. operating on a single 3.3v supply, and special feature are low power consumption, high speed. the cxk5v81000atm is a suitable ram for portable equipment with battery back up. features extended operating temperature range: ?5 to +85? fast access time: (access time) -85llx 85ns (max.) -10llx 100ns (max.) low standby current: 28 a (max.) low data retention current: 24 a (max.) single 3.3v supply: 3.3v 0.3v low voltage data retention: 2.0v (min.) package 8mm 20mm 32 pin tsop package function 131072-word x 8-bit static ram structure silicon gate cmos ic sony reserves the right to change products and specifications without prior notice. this information does not convey any license by any implication or otherwise under any patents or other right. application circuits shown, if any, are typical examples illustrating the operation of the devices. sony cannot assume responsibility for any problems arising out of the use of these circuits. block diagram memory matrix 1024 512 i/o gate column decoder row decoder buffer buffer buffer i/o buffer v cc gnd i/o1 i/o8 oe we ce1 a10 a11 a9 a8 a15 a16 a14 a12 a7 a5 a6 a4 a3 a1 a0 a13 a2 ce2 32 pin tsop (plastic)
?2 cxk5v81000atm address input data input output chip enable 1, 2 input write enable input output enable input power supply ground no connection symbol description supply voltage input voltage input and output voltage allowable power dissipation operating temperature storage temperature soldering temperature ?time v cc v in v i/o p d topr tstg tsolder ?.5 to +4.6 ?.5 * to v cc + 0.5 ?.5 * to v cc + 0.5 0.7 ?5 to +85 ?5 to +150 235 ?10 v v v w ? ? ? ?s item symbol rating unit absolute maximum ratings (ta = 25?, gnd = 0v) * v in , v i/o = ?.0v min. for pulse width less than 50ns. pin description a0 to a16 i/o1 to i/o8 ce1, ce2 we oe v cc gnd nc oe a10 ce1 i/o8 i/o7 i/o6 i/o5 i/o4 gnd i/o3 i/o2 i/o1 a0 a1 a2 a3 18 19 20 21 22 23 24 25 26 27 28 29 30 32 a11 a9 a8 a13 we ce2 a15 vcc nc a16 a14 a12 a7 a6 a5 a4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 31 17 cxk5v81000atm pin configuration (top view) h l l l l h h h h l h h l not selected not selected output disable read write high z high z high z data out data in i sb1 , i sb2 i sb1 , i sb2 i cc1 , i cc2 , i cc3 i cc1 , i cc2 , i cc3 i cc1 , i cc2 , i cc3 ce1 ce2 oe we mode i/o pin v cc current truth table : h?or ? supply voltage input high voltage input low voltage item symbol min. typ. max. unit v cc v ih v il 3.0 2.2 ?.3 * 3.3 3.6 v cc + 0.3 0.6 v v v dc recommended operating conditions (ta = ?5 to +85?, gnd = 0v) * v il = ?.0v min. for pulse width less than 50ns.
?3 cxk5v81000atm input leakage current output leakage current operating power supply current i li i lo i cc1 v in = gnd to v cc ce1 = v ih or ce2 = v il or oe = v ih or we = v il v i/o = gnd to v cc ce1 = v il , ce2 = v ih v in = v ih or v il i out = 0ma 85llx 10llx ?5 to +85? ?5 to +70? +25? ? ? ?10 0.48 0.12 28 14 1.4 ? ma 1 30 25 +1 +1 3 40 35 ? ? ma ma ma item symbol min. typ. * max. unit test conditions electrical characteristics dc characteristics (v cc = 3.3v 0.3v, gnd = 0v, ta = ?5 to +85?) * v cc = 3.3v, ta = 25? average operating current output high voltage output low voltage standby current i cc2 i cc3 i sb1 i sb2 v oh v ol min. cycle duty = 100% i out = 0ma cycle time 1 s duty = 100% i out = 0ma ce1 0.2v ce2 3 vcc ?0.2v v il 0.2v v ih 3 vcc ?0.2v ce1 = v ih or ce2 = v il i ol = 2.0ma 2.4 0.4 v v i oh = ?.0ma ce2 0.2v ce1 3 vcc ?0.2v or { ce2 3 vcc ?0.2v
?4 cxk5v81000atm input capacitance i/o capacitance item symbol test conditons min. typ. max. unit c in c i/o 8 10 pf pf v in = 0v v i/o = 0v input pulse high level input pulse low level input rise time input fall time input and output reference level -85llx output load conditions -10llx v ih = 2.2v v il = 0.6v t r = 5ns t f = 5ns 1.4v c l * = 30pf, 1ttl c l * = 100pf, 1ttl item conditions ac characteristics ac test conditions (v cc = 3.3v 0.3v, ta = ?5 to +85?) * c l includes scope and jig capacitances. i/o capacitance (ta = 25?, f = 1mhz) note) this parameter is sampled and is not 100% tested. ttl c l test circuit
?5 cxk5v81000atm item symbol min. max. min. max. -85llx -10llx unit t rc t aa t co1 t co2 t oe t oh t lz1 , t lz2 t olz t hz1 * , t hz2 * t ohz * 85 10 10 5 85 85 85 40 35 30 100 10 10 5 100 100 100 50 40 35 ns ns ns ns ns ns ns ns ns ns read cycle time address access time chip enable access time (ce1) chip enable access time (ce2) output enable to output valid output hold from address change chip enable to output in low z (ce1, ce2) output enable to output in low z (oe) chip disable to output in high z (ce1, ce2) output disable to output in high z (oe) read cycle (we = ?? * t hz1 , t hz2 and t ohz are defined as the time required for outputs to turn to high impedance state and are not referred to as output voltage levels. * t whz is defined as the time required for outputs to turn to high impedance state and is not referred to as output voltage level. item symbol min. max. min. max. -85llx -10llx unit t wc t aw t cw t dw t dh t wp t as t wr t wr1 t ow t whz * 85 70 70 35 0 60 0 5 5 5 35 100 80 80 40 0 70 0 5 5 5 40 ns ns ns ns ns ns ns ns ns ns ns write cycle time address valid to end of write chip enable to end of write data to write time overlap data hold from write time write pulse width address setup time write recovery time (we) write recovery time (ce1, ce2) output active from end of write write to output in high z write cycle (vcc = 3.3v 0.3v, gnd = 0v, ta = ?5 to +85?) (vcc = 3.3v 0.3v, gnd = 0v, ta = ?5 to +85?)
?6 cxk5v81000atm address t aa t rc t oh data out previous data valid data valid address t aa t rc t lz2 t ohz t oe t olz ce1 oe data out high impedance data valid t co1 t hz t lz1 t hz1 t hz2 t co2 ce2 timing waveform read cycle (1) : ce1 = oe = v il , ce2 = v ih , we = v ih read cycle (2) : we = v ih
?7 cxk5v81000atm address t aw t wc t cw t dh t whz t dw ce1 we data out high impedance data valid t ow ( * 2) ( * 2) oe data in t wr t as t wp ( * 1) t cw ce2 address oe t wc t aw data valid t as t cw t wr1 t wp t dw t dh high impedance ce1 we data out data in t cw ( * 3) ce2 write cycle (1) : we control write cycle (2) : ce1 control
?8 cxk5v81000atm address oe t wc t aw data valid t cw t wr1 t wp t dw t dh high impedance ce1 we data out data in t as t cw ( * 3) ce2 * 1 write is executed when both ce1 and we are at low and ce2 is at high simultaneously. * 2 do not apply the data input voltage of the opposite phase to the output while i/o pin is in output condition. * 3 t wr1 is tested from either the rising edge of ce1 or the falling edge of ce2, whichever comes earlier, until the end of the write cycle. write cycle (3) : ce2 control
?9 cxk5v81000atm * 1 ?5 to +85? ?5 to +70? +25? v cc = 2.0 to 3.6v * 1 chip disable to data retention mode data retention voltage data retention setup time recovery time v dr i ccdr1 i ccdr2 t cdrs t r 2.0 0 5 0.4 0.48 * 2 3.6 24 12 28 v ? ? ns ms item symbol test conditions min. typ. max. unit data retention characteristics (ta = ?5 to +85?) * 1 ce1 3 vcc ?0.2v, ce2 3 vcc ?0.2v (ce1 control) or ce2 0.2v (ce2 control) * 2 v cc = 3.3v, ta = 25? data retention current v cc = 3.0v * 1 data retention waveform ?low supply voltage data retention waveform (1) (ce1 control) v cc 4.5v 2.2v v dr ce1 gnd t cdrs data retention mode ce1 v cc ?0.2v ?low supply voltage data retention waveform (2) (ce2 control) t r data retention mode t r t cdrs ce2 0.2v v cc 4.5v 0.4v ce2 gnd v dr
?10 cxk5v81000atm package outline unit: mm sony code eiaj code jedec code tsop-32p-l01 tsop032-p-0820-a package structure package material lead treatment lead material package weight 42 alloy solder plating epoxy / phenol resin 0?to 10 32pin tsop ( i ) (plastic) 8.0 0.2 32 17 0.2 ?0.03 + 0.08 0.5 note : * not include mold fins. 116 a 0.127 ?0.02 + 0.05 0.1 0.1 0.5 0.1 1.07 ?0.1 + 0.2 * 18.4 0.2 20.0 0.2 detail a 0.1 0.08 m
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